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The semiconductor material of molybdenum disulfide research make a breakthrough



    The bottleneck of semiconductor material is hopeful to make a breakthrough. Yesterday, the Taiwan Ministry of Science and Technology announced that Taiwan, Japan,Saudi Arab and other multinational teams have researched a kind of single layer Molybdenum disulfide P-N junction, which is hopeful to take place of silicon chips to be a new core component for the semiconductor, widely used in the wearable devices and cellphones.

    It’s the first issued research findings of semiconductor material worldwide,which will be published in the latest international journal SCIENCE, and will also attract TSMC to make a co-research to seize a initiative.
Under the budget support for the Top crystal material development and production plan by the Ministry of Science and Technology, the bottleneck had got a great achievement. The host of the research team,Professor Zhang Wenhao of Taiwan Jiaotong University point out that Intel and Samsung had already deeped into the R&D of single layer material, the TSMC should cooperate with the education circles. The one Who anticipate to develop the single layer element material, will occupy a leading position.  
    Zhang Wenhao said that the single layer Molybdenum Disulfide is quite a promising material admitted by the global scientist, the R&D team developed the single layer molybdenum disulfide and tungsten selenide’s perfect P-N contact, which is hopeful to solve the key problem for the semi conductor elements.
    He also said that it will be widely used in the micro electronic elements in the near future, especially the single layers MoS2 with a thin and transparent characters, will be used in the low power consumption soft elements or the cellphone apps.
Taiwan scientist Li Lianzhong was a researcher in Academia Sinica, was awarded as a scientist by the King University of Saudi Arabic, he has formed a team with taiwan, Saudi Arabic and Japan to cooperate the plans. Except for Zhang Wenhao, Professor Wei Guanghua of Jiaotong University and Researcher Zhu Zhiwei from Academia Sinica are in the Taiwan team.  

    The ministry of Science and Technology point out that molybdenum disulfide is a concerned layer material after graphene, the single layer molybdenum disulfide has a good luminous efficiency,electron mobility and high switch ration, can be used in the new type low energy logic circuit, it’s possible to take place of silicon wafers to be the next main elements.
    The ministry of Science and Technology also said  that some big enterprise like Intel, TSMC and Samsung, can do the elements with 7-10 nms, while this will help molybdenum disulfide to use in the 2 nm semiconductors.